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Edward Gebara

Associate Professor

Electrical and Computer Engineering (ECE), College of Engineering

Engineering Building, 428 S Shaw Lane Room 3215

(517) 353-3517 gebaraed@msu.edu

Biography

Dr. Edward Gebara currently is an Associate Professor at Michigan State University. His research interest includes the design of integrated circuits dedicated to extreme temperature environments, and the development of radiation tolerant electronics.

Dr. Edward Gebara received his B.S. (with highest honors), M.S., and Ph.D. degrees in Electrical and Computer Engineering from the Georgia Institute ... of Technology, Atlanta, in 1996, 1999, and 2003, respectively. From 1999 to 2000 he was an invited scientist at Chalmers University, Sweden.

In 2001, Dr. Gebara applied the results of his research to define the core technology for Quellan, Inc. as its initial employee, which is now part of Intersil (NASDQ: ISIL). These technologies served as the basis for signal integrity solutions developed for the enterprise, video, storage, and wireless markets.

While working at Quellan, Dr. Gebara maintained a research faculty position at Georgia Tech where he led the research efforts of the Mixed-Signal team from 2003 to 2011. In early 2008, Dr. Gebara joined Georgia Tech on a full-time basis. At Georgia Tech, Dr. Gebara supervised Ph.D. students whose research focuses on equalization, crosstalk cancellation, and self-healing mixed-signal techniques in pure CMOS. These technologies are applied to next generation optics, wired, and wireless communication systems. In 2010, Dr. Gebara was appointed Adjunct Assistant Professor at Georgia Tech.

From 2011 to 2023, Dr. Gebara was the Director of Engineering at Electromagnetic Sensor Technologies Inc., a sister company of Nanowave Technologies. Dr. Gebara presided over the development of MMIC and Hybrid designs in GaAs, and GaN technologies for applications to include EW, radar, defense, aerospace, and communications applications. Additionally, he oversaw research collaborations with US universities and guided Ph.D. students through their program.

Dr. Gebara has authored or co-authored over 50 papers and has several patents issued. He is a reviewer for the IEEE MTT-S International Microwave Symposium. Additionally, Dr. Gebara served as the Vice Chair of the IEEE Antennas and Propagation Society and Microwave Theory and Techniques Atlanta Chapter from 2010 to 2012. Furthermore, Dr. Gebara served as the chair of MTT-25 Digital Signal Processing Technical Committee from 2018 to 2021. Moreover, Dr. Gebara served as Workshops and Tutorials Chair and Student Competition Chair of the Technical Program for the IEEE MTT-S International Microwave Symposium in 2008 and 2021 respectively.

Research Interest
- Radiation-tolerant electronics for aerospace applications.
- Irradiation testing and understanding of the mechanisms of radiation damage for microwave electronic components.
- Integrated circuits dedicated to extreme temperature environments.
- Self-Healing and reconfigurable integrated circuits.
- Linearization and transmitter techniques for power amplifiers.
- Wireless Cancellation to Solve System Applications.
- Integrate Engineering with Biology.

Education

Ph.D., Electrical and Computer Engineering, Georgia Institute of Technology 2003

M.Sc., Electrical and Computer Engineering, Georgia Institute of Technology 1999

B.Sc., Electrical Engineering (Highest Honor), Georgia Institute of Technology 1996

Publications

Referred Journal Papers

[1] G. C. Barisich, A. C. Ulusoy, E. Gebara, J. Papapolymerou, ‘A Reactively Matched 1.0–11.5 GHz Hybrid Packaged GaN High Power Amplifier”, 2015 IEEE Microwave and Wireless Components Letters, Volume: 25, Issue: 12, December 2015

[2] V. Lakafosis, A. Traille, H.Lee, E. Gebara, M. M. Tentzeris, G. R. DeJean, D. Kirovski, “RF Fingerprinting Physical Objects for Anticounterfeiting Applications” IEEE Transactions on Microwave Theory and Techniques, December 2010, Volume: PP , Issue:99

[3] S. Chandramouli, F. Bien, H. Kim, C. Scholz, E. Gebara, J. Laskar, “10-Gb/s Optical Fiber Transmission Using a Fully Analog Electronic Dispersion Compensator (EDC) With Unclocked Decision-Feedback Equalization,” IEEE Transactions on Microwave Theory and Techniques, Dec. 2007 Volume: 55, Issue: 12, Part 2, Page(s): 2740-2746.

...

[4] H. Kim, J. de Ginestous, F. Bien, S. Chandramouli, Y. Hur, E. Gebara, J. Laskar, “An Electronic Dispersion Compensator (EDC) with an Analog Eye-Opening Monitor (EOM) for 1.25 Gbps Gigabit Passive Optical Network (GPON) Upstream Links,” IEEE Transactions of Microwave Theory Techniques, Volume 55, Issue 12, Part 2, Dec. 2007 Page(s):2942 – 2950.

[5] F. Bien, H. Kim, Y. Hur, M. Maeng, S. Chandramouli, J. Cha, E. Gebara, J. Laskar; “A 10-Gb/sec Reconfigurable CMOS Equalizer Employing a Transition Detector-Based Output Monitoring Technique for Band-Limited Serial Link,” IEEE Trans. Microwave Theory Tech., Vol. 54, Num. 12, Page(s): 4538 - 4547 Dec 2006.

[6] Raghavan, A.; Gebara, E.; Tentzeris, E.M.; Laskar, J.; “Analysis and Design of an Interference Canceller for Collocated Radios,” IEEE Transactions on Microwave Theory and Techniques, Volume 53, Issue 11,, Nov. 2005 Page(s):3498 – 3508.

[7] Hur, Y.; Moonkyun Maeng; Chun, C.; Bien, F.; Hyoungsoo Kim; Chandramouli, S.; Gebara, E.; Laskar, J.; “Equalization and near-end crosstalk (NEXT) noise cancellation for 20-Gb/s 4-PAM backplane serial I/O interconnections,” IEEE Transactions on Microwave Theory and Techniques, Volume 53, Issue 1, Jan. 2005 Page(s):246 – 255.

[8] Maeng, M.; Bien, F.; Hur, Y.; Kim, H.; Chandramouli, S.; Gebara, E.; Laskar, J.; “0.18-m CMOS Equalization Techniques for 10-Gb/s Fiber Optical Communication Links,” IEEE Transactions on Microwave Theory and Techniques, Volume 53, Issue 11, Nov. 2005 Page(s):3509 – 3519.

[9] Pelard, C.; Gebara, E.; Kim, A.J.; Vrazel, M.G.; Bien, F.; Hur, Y.; Moonkyun Maeng; Chandramouli, S.; Chun, C.; Bajekal, S.; Ralph, S.E.; Schmukler, B.; Hietala, V.M.; Laskar, J.; “Realization of multigigabit channel equalization and crosstalk cancellation integrated circuits,” Solid-State Circuits, IEEE Journal of Volume 39, Issue 10, Oct. 2004 Page(s):1659 – 1670.

[10] Nuttinck, S.; Wagner, B.K.; Banerjee, B.; Venkataraman, S.; Gebara, E.; Laskar, J.; Harris, H.M.; “Thermal analysis of AlGaN-GaN power HFETs,” IEEE Transactions on Microwave Theory and Techniques, Volume 51, Issue 12, Dec. 2003 Page(s):2445 – 2452.

[11] Nuttinck, S.; Gebara, E.; Banerjee, B.; Laskar, J.; “Applications of GaN Microwave Electronic Devices,” IEIEC Transaction on Electronics, August 2003.

[12] Nuttinck, S.; Gebara, E.; Pinel, S.; Laskar, J.; “Dispersion Mechanisms in AlGaN/GaN HFETs,” IEIEC Transaction on Electronics, August 2003.

[13] Nuttinck, S.; Gebara, E.; Laskar, J.; Harris, M.; “High-frequency noise in AlGaN/GaN HFETs,” IEEE Microwave and Wireless Components Letters [see also IEEE Microwave and Guided Wave Letters] Volume 13, Issue 4, April 2003 Page(s):149 – 151.

[14] Nuttinck, S.; Gebara, E.; Laskar, J.; Shealy, J.; Harris, M.; “Improved RF modeling techniques for enhanced AlGaN/GaN HFETs,” IEEE Microwave and Wireless Components Letters, [see also IEEE Microwave and Guided Wave Letters] Volume 13, Issue 4, April 2003 Page(s):140 – 142.

[15] Nuttinck, S.; Gebara, E.; Laskar, J.; Harris, H.M.; “Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs,” IEEE Transactions on Microwave Theory and Techniques, Volume 49, Issue 12, Dec. 2001 Page(s):2413 – 2420.

[16] Nuttinck, S.; Gebara, E.; Laskar, J.; Harris, M.; “Development of GaN wide band gap technology for microwave power applications,” IEEE Microwave Magazine, Volume 3, Issue 1, March 2002 Page(s):80 – 87.

[17] Farahmand, M.; Brennan, K.F.; Gebara, E.; Deukhyoun Heo; Young Suh; Laskar, J.; “Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs,” IEEE Transactions on Electron Devices, Volume 48, Issue 9, Sept. 2001 Page(s):1844 – 1849.

[18] Deukhyoun Heo; Gebara, E.; Yi-Jan Emery Chen; Seung-Yup Yoo; Hamai, M.; Youngsuk Suh; Laskar, J., “An improved deep sub micrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling,” IEEE Transactions on Microwave Theory and Techniques, Volume 48, Issue 12, Dec. 2000 Page(s):2361 – 2369. Winner of Best Paper Award for 2000 IEEE International Microwave Symposia.

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Edward Gebara

Biography

Education

Publications