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Professional headshot of Peng Zhang

Peng Zhang

Associate Professor

Electrical and Computer Engineering (ECE), College of Engineering

Engineering Bldg, 428 S Shaw Ln Room 3213


Peng Zhang's research interests are in theory and modeling of nanoelectronics, electromagnetic fields and waves, plasmas, and accelerator technology. He has worked on electrical contacts, thin films, classical, ballistic, and quantum diodes, space-charge-limited current flows, beam-circuit interaction, microwave absorption on rough surfaces, multipactor and breakdown, slow wave structures, z-pinches, ... laser-plasma interaction, and more recently on vacuum nano devices, quantum tunneling plasmonic junctions, ultrafast photoemission, and novel miniaturized light sources. Prior to joining MSU, he was an Assistant Research Scientist at the University of Michigan.

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Ph.D., Nuclear Engineering and Radiological Sciences, University of Michigan - Ann Arbor, 2012

M. S., Nuclear Engineering and Radiological Sciences, University of Michigan - Ann Arbor, 2010

M. Eng., Microelectronics, Nanyang Technological University (Singapore), 2008

B. Eng., Electrical and Electronic Engineering, Nanyang Technological University (Singapore), 2006


Richard and Eleanor Towner Prize for Outstanding Ph.D. Research at University of Michigan

Rackham Presidential Fellowship Award at University of Michigan

IEEE Nuclear and Plasma Sciences Graduate Scholarship Award


Peng Zhang, and Y. Y. Lau, “Ultrafast strong-field photoelectron emission from biased metal surfaces: exact solution to time-dependent Schrödinger Equation”, Sci. Rep., 6, 19894 (2016).

Peng Zhang, Q. Gu, Y. Y. Lau, and Y. Fainman, “Constriction Resistance and Current Crowding in Electrically-pumped Semiconductor Nanolasers with the Presence of Undercut and Sidewall Tilt”, IEEE J. Quantum Electronics, 52, 2000207 (2016).

Peng Zhang, “Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions”, Sci. Rep., 5, 9826 (2015).

Peng Zhang, Y. Y. Lau, and R. M. Gilgenbach, “Analysis of current crowding in thin film contacts from exact field solution”, J. Phys. D: Appl. Phys., 48, 475501 (2015).


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