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Professional headshot of Tim Hogan

Tim Hogan


Electrical and Computer Engineering (ECE), College of Engineering

Engr Rsch Complex, 1449 Engineering Research Ct Room C136


Research focus is in electronic materials, including temperature dependent electrical conductivity, Seebeck coefficient, thermal conductivity, Hall effect, and current vs. voltage measurements for materials and devices. Areas of research have included single crystal diamond, thermoelectric materials, oxide nanowires, and surface enhanced Raman spectroscopy. Experimental techniques include pulsed laser ... deposition, laser micromachining, cleanroom procedures, solid state reactions, powder processing, spark plasma sintering, and high temperature high pressure pressing/annealing.

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Ph.D., Northwestern University 1996


National Science Foundation CAREER Award, 2001

Withrow Award for Distinguished Scholarship, Michigan State University, 2002

Elected Senior Member to the Institute of Electrical and Electronics Engineers (IEEE), 2002

Teacher Scholar Award, Michigan State University, 2004


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A. Kaur, P. Chahal, T. Hogan "Selective Fabrication of SiC/Si Diodes by Excimer Laser Under Ambient Conditions," IEEE Electron Device Letters, 37(2), pp. 142-145, (2016).

P. Gao, J. Davis, V. Poltavets, T. Hogan, "The p-type Mg2LixSi0.4Sn0.6 Thermoelectric Materials Synthesized by a B2O3 Encapsulation Method Using Li2CO3 as the Doping Agent," Journal of Meterials Chemistry C, 4(5), pp. 929-934, (2016).

N. Wachter, C. Munson, R. Jarosova, I. Berkun, T. Hogan, R. Rocha-Filho, G. Swain, "Structure, Electronic Properties, and Electrochemical Behavior of a Boron-Doped Diamond/Quartz Optically Transparent Electrode," ACS Applied Materials & Interfaces, 8(42), pp. 28325-28337, (2016).

P. Gao, X. Lu, I. Berkun, R. D. Schmidt, E. D. Case, T. P. Hogan, "Reduced Lattice Thermal Conductivity in Bi-Doped Mg2Si0.4Sn0.6," Applied Physics Letters, 105(20), pp. 202104-1 - 202104-5, (2014).


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