Timothy Grotjohn

Contact Information

Address: Engineering Research Complex
1449 Engineering Research Ct
Room: B113
East Lansing , MI 48824

Phone:

(517) 353-8906

Email:

grotjohn@msu.edu

Website:

Professor

Electrical and Computer Engineering

Biography

Dr. Grotjohn received his Ph.D. in electrical engineering from Purdue University in 1986. He joined the Department of Electrical and Computer Engineering at Michigan State University as a faculty member in 1987. He is currently Professor in the ECE Department where he works on diamond process and device research and development. He served for 9 years as the Department Chairperson and for six years as the R&D Director of the Fraunhofer USA Center for Coatings and Diamond Technologies located at MSU. His current research activities include microwave plasma studies for materials processing, diamond deposition reactor design, diamond process R&D for doped and undoped diamond, and diamond device design and development including diodes, transistors, quantum sensors and high energy particle detectors. He has published 70 journal papers and over 250 conference paper. He has also received 14 patents.

Education

  • Ph.D., Electrical Engineering, Purdue University 1986
  • M.S., Electrical Engineering, University of Minnesota 1984
  • B.E.E., Electrical Engineering, University of Minnesota 1982

Research Interests

  • Microwave Plasma Studies for Materials Processing
  • Diamond Deposition Reactor Design
  • Diamond Process Research and Development for Doped and Undoped Diamond
  • Diamond Device Design and Development
  • Diamond Diodes
  • Diamond Transistors
  • Diamond Quantum Sensors
  • Diamond High-Energy Particle Detectors

Selected Publications

  1. A. Bhattacharya, T. A. Grotjohn and A. Stolz, Degradation of single crystal diamond detectors in swift heavy ion beams, Diamond and Related Materials, 70, 124-131 (2016).
  2. Y. Zhou, J. Anaya, J. Pomeroy, H.R. Sun, X. Gu, A.D. Xie, E. Beam, M. Becker, T.A. Grotjohn, C. Lee, M. Kuball, Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling, ACS Applied Materials and Interfaces, 9, pp. 34416-34422, (2017).
  3. J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, .. T. A. Grotjohn, et.al., Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges, Advanced Electronic Materials, 4, 1600501 (2018).
  4. M. W. Geis, T.H. Fedynyshyn, M.E. Plaut, T.C. Wade, C.H. Wuorio, S. A. Vitale, J.O. Varghese, T.A. Grotjohn, R.J. Nemanich and M.A.Hollis, Chemical and semiconducting properties of NO2-activated H-terminated Diamond, Diamond & Related Materials, 84, 86-94 (2018).
  5. Cho, SJ; Liu, D; Hardy, A; Kim, J; Gong, JR; Herrera-Rodriguez, CJ; Swinnich, E; Konstantinou, X; Oh, GY; Kim, DG; Shin, JC; Papapolymerou, J; Becker, M; Seo, JH; Albrecht, JD; Grotjohn, TA; Ma, ZQ, Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs, AIP Advances, 10, 125226, 2020.

MSU Scholar

Google Scholar

Awards

  • Technology Transfer Achievement Award, Michigan State University, 2021
  • Withrow Exceptional Service Award, College of Engineering, Michigan State University, 2005.
  • Withrow Distinguished Scholar Award, College of Engineering, Michigan State University, 2004.
  • Withrow Excellence in Teaching Award, Electrical & Computer Engineering, College of Engineering, Michigan State University, 2002.